Prof David Ritchie
Biography
David Ritchie is Professor of Experimental Physics and a Fellow of Robinson College in Cambridge. He is also Professor of Semiconductor Science and Technology at Swansea University. He received his first degree, in physics, from the University of Oxford in 1980 and his D Phil from the University of Sussex in 1986 studying the physics of mixtures of liquid 3He and 4He at milli-kelvin temperatures. Since then he has been working on III-V semiconductor physics and has extensive experience of the growth, fabrication and measurement of low dimensional electronic and optical structures. He has been co-author of over 1100 papers and was awarded the 2008 Tabor medal and prize by the UK Institute of Physics for distinguished research in surface or nanoscale physics. In 2020 he was elected a Fellow of the Learned Society of Wales.
Research
The physics and technology of III-V semiconductors including:
- Molecular beam epitaxy (MBE)
- MBE growth on patterned substrates
- High mobility two-dimensional electron and hole gases
- Quantum transport in low-dimensional structures
- Terahertz quantum cascade lasers
- Terahertz nanoscopy
- The interaction of THz radiation with quantum devices
- Self assembled InAs quantum dots
- Single and entangled photon sources for quantum information
- Single photon detectors
- Topological insulator materials for quantum devices
