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Dr. Andy Irvine

Dr. Andy Irvine

Senior Assistant in Research

Room M232 Microelectronics Research Centre
Cavendish Laboratory
JJ Thomson Avenue

Cambridge CB3 0HE
Office Phone: +44 (0)1223 337555

Biography:

Dr Andy Irvine received his doctorate from the University of Sussex in 1993 for work on point-defect dynamics and spectroscopy in irradiated and as-grown III-V semiconductors. A post-doc position at the University of Sheffield was followed in 1996 by another in the Microelectronics Research Centre, leading to an established post in 2002. Dr Irvine specialises in the design and fabrication of semiconductor devices which demonstrate novel physical effects.

Research groups

Microelectronics:

Research Interests

Design, fabrication, materials science and physics of semiconductor devices. Currently working on spintronic devices in the dilute magnetic semiconductor GaMnAs and in the GaAs/AlGaAs system. Principally involved in device design and fabrication, and specialising in e-beam lithography for nanoscale devices. Previously involved in silicon-based coulomb blockade memory devices and numerous specialised transistor structures in a range of III-V compounds. 

Key Publications

"Spin Hall Effect Transistor", J. Wunderlich, B. G. Park, A. C. Irvine, L. P. Zârbo, E. Rozkotová, P. Nemec, V. Novák, J. Sinova and T. Jungwirth, Science 330, 1801 (2010).

"Coulomb oscillations of indium-doped ZnO nanowire transistors in a magnetic field", X. L. Xu, A. C. Irvine, Y. Yang, X. Zhang and D. A. Williams, Phys. Rev. B 82, 195309 (2010)

"Spin-injection Hall effect in a planar photovoltaic cell", J. Wunderlich, A. C. Irvine, J. Sinova, B. G. Park, L. P. Zârbo, X. L. Xu, B. Kaestner, V. Novák, and T. Jungwirth, Nature Physics 5, 675 (2009).

"The origin and control of the sources of AMR in (Ga,Mn)As devices", A. W. Rushforth, K. Výborný, C. S. King, K. W. Edmonds, R. P. Campion, C. T. Foxon, J. Wunderlich, A. C. Irvine, V. Novák, K. Olejnk, A. A. Kovalev, J. Sinova, T. Jungwirth and B. L. Gallagher, J. Magn. Magnetic Mat. 321 1001 (2009)

"Anisotropic Magnetoresistance Components in (Ga,Mn)As", A. W. Rushforth, K. Výborný, C. S. King, K. W. Edmonds, R. P. Campion, C. T. Foxon, J. Wunderlich, A. C. Irvine, P. Vašek, V. Novák, K. Olejník, J. Sinova T. Jungwirth and B. L. Gallagher, Physical Review Letters 99 147207 (2007).

"Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching", J. Wunderlich, A. C. Irvine, J. Zemen, V. Holý, A. W. Rushforth, E. De Ranieri, U. Rana, K. Výborný, J. Sinova, C. T. Foxon, R. P. Campion, D. A. Williams, B. L. Gallagher and T. Jungwirth, Physical Review B 76 054424 (2007).

"Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor", J. Wunderlich, T. Jungwirth, B. Kaestner, A. C. Irvine, A. B. Schick, N. Stone, K.-Y. Wang, U. Rana, A. D. Giddings, C. T. Foxon, R. P. Campion, D. A. Williams and B. L. Gallagher, Physical Review Letters 97 (7) 077201 (2006).

"A high-speed silicon-based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element", A. C. Irvine, Z. A. K. Durrani and H. Ahmed, Journal of Applied Physics 87 (12) 8594-8603 (2000).